+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.">
+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.">
+ 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.">
Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles 5 mA to 6 A – digilifeset.online
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Al2O3- Sapphire Wafer, M Plane 2"Dia x0.5 mm wafer, 1SP Crucibles 5 mA to 6 ASpecifications: Orientation: M <10 10> + 0. 5 o Wafer size: 2" dia x 0. 4 0. 5 mm thickness Polished surface: One sideEPI polished via a special CMP procedure. Ra <5A Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Typical Properties: Crystal Structure: Hexagonal. a=4. 758 Angstroms c=12. 99 Angstroms, Melting Point: 2040 degree C Density: 3. 97 gram cm2 Growth Technique: CZ crystal purity: >99.
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